Transistors Bipolar (BJT) NPN Epitaxial Sil
KSC2688YS: Transistors Bipolar (BJT) NPN Epitaxial Sil
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 300 V |
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.2 A |
| DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single |
| Maximum Operating Frequency : | 80 MHz | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | Through Hole | Package / Case : | TO-126 |
| Packaging : | Bulk |
| Technical/Catalog Information | KSC2688YS |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 300V |
| Current - Collector (Ic) (Max) | 200mA |
| Power - Max | 1.25W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 5mA, 50mA |
| Frequency - Transition | 80MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-126 |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | KSC2688YS KSC2688YS |