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KSC2751RTU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00212455 Detail

KSC2751RTU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC2751RTU Data Sheet

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Part Number:
KSC2751RTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 15
Package / Case : TO-3P


Parameters:

Technical/Catalog InformationKSC2751RTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)15A
Power - Max120W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 2A, 10A
Frequency - Transition-
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-3P
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC2751RTU
KSC2751RTU



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