Transistors Bipolar (BJT) NPN Epitaxial Sil
KSC2751RTU: Transistors Bipolar (BJT) NPN Epitaxial Sil
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 400 V | ||
| Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 15 A | ||
| DC Collector/Base Gain hfe Min : | 15 | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-3P | Packaging : | Tube |
| Technical/Catalog Information | KSC2751RTU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Current - Collector (Ic) (Max) | 15A |
| Power - Max | 120W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 2A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 2A, 10A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 100A |
| Mounting Type | Through Hole |
| Package / Case | TO-3P |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | KSC2751RTU KSC2751RTU |