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KSD1020GBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD1020GBU Data Sheet

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Part Number:: KSD1020GBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	25 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.7 A
DC Collector/Base Gain hfe Min :	120	Configuration :	Single
Maximum Operating Frequency :	170 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk
Maximum DC Collector Current : 0.7 A
DC Collector/Base Gain hfe Min : 120
Maximum Operating Frequency : 170 MHz

Parameters:

Technical/Catalog Information	KSD1020GBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	700mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	400mV @ 70mA, 700mA
Frequency - Transition	170MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92S
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSD1020GBU KSD1020GBU

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KSD1020GBU

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