KSD1021GBU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00210107 Detail

KSD1021GBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

floor Price/Ceiling Price

Part Number:
KSD1021GBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 120 Configuration : Single
Maximum Operating Frequency : 130 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 130 MHz
Maximum DC Collector Current : 1 A
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 30 V
DC Collector/Base Gain hfe Min : 120


Parameters:

Technical/Catalog InformationKSD1021GBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)1A
Power - Max350mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Frequency - Transition130MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92S
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD1021GBU
KSD1021GBU



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