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KSD1221GTU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00210852 Detail

KSD1221GTU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD1221GTU Data Sheet

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Part Number:
KSD1221GTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 60 Configuration : Single
Maximum Operating Frequency : 3 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-251
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 3 MHz
DC Collector/Base Gain hfe Min : 60
Package / Case : TO-251


Parameters:

Technical/Catalog InformationKSD1221GTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)3A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 300mA, 3A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD1221GTU
KSD1221GTU



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