KSD1222TU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00211724 Detail

KSD1222TU: Transistors Bipolar (BJT) NPN Epitaxial Sil

floor Price/Ceiling Price

Part Number:
KSD1222TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 2000 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Collector- Emitter Voltage VCEO Max : 40 V
Package / Case : TO-251
DC Collector/Base Gain hfe Min : 2000


Parameters:

Technical/Catalog InformationKSD1222TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)3A
Power - Max15W
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic1.5V @ 4mA, 2A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD1222TU
KSD1222TU



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