Transistors Bipolar (BJT) NPN Epitaxial Sil
KSD1222TU: Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 40 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 3 A | ||
DC Collector/Base Gain hfe Min : | 2000 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-251 | Packaging : | Tube |
Technical/Catalog Information | KSD1222TU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 3A |
Power - Max | 15W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 4mA, 2A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSD1222TU KSD1222TU |