Transistors Bipolar (BJT) NPN Epitaxial Sil
KSD1616LBU: Transistors Bipolar (BJT) NPN Epitaxial Sil
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 50 V |
| Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 1 A |
| DC Collector/Base Gain hfe Min : | 135 | Configuration : | Single |
| Maximum Operating Frequency : | 160 MHz | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | Through Hole | Package / Case : | TO-92 |
| Packaging : | Bulk |
| Technical/Catalog Information | KSD1616LBU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 1A |
| Power - Max | 750mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Frequency - Transition | 160MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-92 |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | KSD1616LBU KSD1616LBU |