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KSD1944TU

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00210148 Detail

KSD1944TU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

KSD1944TU Data Sheet

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Part Number:
KSD1944TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 8 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 400 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 8 V
Package / Case : TO-220
DC Collector/Base Gain hfe Min : 400


Parameters:

Technical/Catalog InformationKSD1944TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)3A
Power - Max30W
DC Current Gain (hFE) (Min) @ Ic, Vce400 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 2A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD1944TU
KSD1944TU



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