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KSD363OTU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00211565 Detail

KSD363OTU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD363OTU Data Sheet

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Part Number:
KSD363OTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 120 V
Emitter- Base Voltage VEBO : 8 V Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 70 Configuration : Single
Maximum Operating Frequency : 10 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Maximum DC Collector Current : 6 A
Packaging : Bulk
Emitter- Base Voltage VEBO : 8 V
Package / Case : TO-220
Collector- Emitter Voltage VCEO Max : 120 V
Maximum Operating Frequency : 10 MHz


Parameters:

Technical/Catalog InformationKSD363OTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)120V
Current - Collector (Ic) (Max)6A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Frequency - Transition10MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD363OTU
KSD363OTU



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