KSD882RS

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00210372 Detail

KSD882RS: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

floor Price/Ceiling Price

Part Number:
KSD882RS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2019/8/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 60 Configuration : Single
Maximum Operating Frequency : 90 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 3 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 60
Collector- Emitter Voltage VCEO Max : 30 V
Package / Case : TO-126
Maximum Operating Frequency : 90 MHz


Parameters:

Technical/Catalog InformationKSD882RS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)3A
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Frequency - Transition90MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD882RS
KSD882RS



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