Features: ·Low Collector-Emitter Saturation Voltage·High Current Gain Bandwidth Product : fT=65MHz @ IC =100mA (Min.)·Complement to KSE210Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Vol...
KSE200: Features: ·Low Collector-Emitter Saturation Voltage·High Current Gain Bandwidth Product : fT=65MHz @ IC =100mA (Min.)·Complement to KSE210Specifications Symbol Parameter Value Units VCB...
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| Symbol | Parameter | Value | Units |
| VCBO | Collector-Base Voltage | 40 | V |
| VCEO | Collector-Emitter Voltage | 25 | V |
| VEBO | Emitter-Base Voltage | 8 | V |
| IC | Collector Current | 5 | A |
| PC | Collector Dissipation(Tc=25oC) | 15 | W |
| TJ | Junction Temperature | 150 | oC |
| TSTG | Storage Temperature | -65-150 | oC |