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KSH3055ITU

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00211472 Detail

KSH3055ITU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

KSH3055ITU Data Sheet

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Part Number:
KSH3055ITU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 20 Configuration : Single
Maximum Operating Frequency : 2 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-251
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
DC Collector/Base Gain hfe Min : 20
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 2 MHz
Package / Case : TO-251


Parameters:

Technical/Catalog InformationKSH3055ITU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)10A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic1.1V @ 400mA, 4A
Frequency - Transition2MHz
Current - Collector Cutoff (Max)50A
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSH3055ITU
KSH3055ITU



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