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KTHD3100C

Features: ·Complementary N-Channel and P-Channel MOSFET·Leadless SMD Package Provides Great Thermal Characteristics·Trench P-Channel for Low On Resistance·Low Gate Charge N-Channel for Test SwitchingSpecifications Parameter Symbol N-Channel P-Channel Unit Drain to source voltage VDSS ...

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SeekIC No. : 004388468 Detail

KTHD3100C: Features: ·Complementary N-Channel and P-Channel MOSFET·Leadless SMD Package Provides Great Thermal Characteristics·Trench P-Channel for Low On Resistance·Low Gate Charge N-Channel for Test Switchin...

KTHD3100C Data Sheet

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KTHD3100C
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Product Details

Description



Features:

·Complementary N-Channel and P-Channel MOSFET
·Leadless SMD Package Provides Great Thermal Characteristics
·Trench P-Channel for Low On Resistance
·Low Gate Charge N-Channel for Test Switching




Specifications

Parameter Symbol N-Channel P-Channel Unit
Drain to source voltage VDSS 20 20 V
Gate to source voltage VGSS ±12 ±8.0 V
Drain current Continuous *1 TA = 25
TA = 85
t 5		 ID 2.9
2.1
3.9		 -3.2
-2.3
-4.4		 A
Drain current Pulsed t = 10 s *1 IDM 12 -13 A
Total power dissipation
t5		 PD

1.1
3.1

 W
Operating and Storage Temperature Range TJ, Tstg -55 to 150
Source Current (Body Diode) IS 2.5 A
Lead Temperature for Soldering Purposes TL 260
Junction-to-Ambient *1 Steady State
t 10s 		RJA 113
60		 /W
*1 Surface Mounted on FR4 board using 1 in sq pad size




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