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L2821

Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 50 Watts 3.40/W 200 -65to150 5.0A 36V 36V 20VD...

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SeekIC No. : 004389020 Detail

L2821: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...

L2821 Data Sheet

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Part Number:
L2821
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
50 Watts
3.40/W
200
-65to150
5.0A
36V
36V
20V





Description

Silicon VDMOS and LDMOS transistors L2821 designed specifically for broadband RF applications. L2821 Suitable for Militry Radios, ellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.






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