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L6560

Power Factor Correction ICs Wide Input Voltage

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SeekIC No. : 00541323 Detail

L6560: Power Factor Correction ICs Wide Input Voltage

L6560 Data Sheet

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Part Number:
L6560
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PDIP-8 Packaging : Tube    

Description

Switching Frequency :
Maximum Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Mounting Style : Through Hole
Package / Case : PDIP-8


Features:

·VERY PRECISE ADJUSTABLE INTERNAL OUTPUT OVERVOLTAGE PROTECTION
·HYSTERETIC START-UP (ISTART-UP < 0.5mA)
·VERYLOW QUIESCENT CURRENT (< 3.5mA)
·INTERNAL START-UP TIMER
·TRANSITION MODE OPERATING
·TOTEM POLE OUTPUT CURRENT: ±400mA
·DIP8/SO8PACKAGES


Pinout

Connection Diagram




Specifications

Symbol Pin Parameter Value Unit
IVcc 8 ICC + IZ 30 mA
IGD 7 Output Totem Pole Peak Current (2s) ±700 mA
INV, COMP
MULT		 1, 2, 3 Analog Inputs & Outputs -0.3 to 7 V
CS 4 Current Sense Input -0.3 to 7 V
ZCD 5 Zero Current Detector 5 (source)
10 (sink)		 mA
mA
Ptot   Power Dissipation @Tamb = 50 °C (Minidip)
(SO8)		 1
0.65		 W
Tj   Junction Temperature Operating Range -25 to 150 °C
Tstg   Storage Temperature -55 to 150 °C



Description

The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption.

Realized in mixed BCD technology, the chip L6560 integrates:

- An undervoltage lockout with micropower startup and hysteresis.

- An internal temperature compensated precise band gap reference.

- A stable error amplifier.

- One quadrant multiplier.

- Current sense comparator.

- An output overvoltage protection circuit.

- A totem-pole output stage able to drive a POWER MOS or IGBT devices with source and sink current of 400mA. The chip works in transition mode and is particularly intended for lamp ballast applications and for low power SMPS.




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