Purchase LC821, In-stock LC821 From SeekIC.
MFG:TI Package Cooled:TSOP24
- Table of contents:
LC821
-
Suppliers
DataSheet
General Description
LC821 Maximum Ratings
|
Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
|
50Watts |
3.40/W |
200 |
-65to150 |
5.0A |
36V |
36V |
20V |
LC821 Features
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TMprocess features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.
LC821
PDF/DataSheet Download
- Datasheet: LC821
- File Size: 38188 KB
- Manufacturer: POLYFET [Polyfet RF Devices]
- Click here to Download
- ·LC8.0
- MICROSEMI [Microsemi Corporation]
- 1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR
- 600987 KB
- ·LC8.0A
- MICROSEMI [Microsemi Corporation]
- 1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR
- 600987 KB
- ·LC8.5
- MICROSEMI [Microsemi Corporation]
- 1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR
- 600987 KB
- ·LC8.5A
- MICROSEMI [Microsemi Corporation]
- 1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR
- 600987 KB
- ·LC80
- MICROSEMI [Microsemi Corporation]
- TRANSIENT ABSORPTION ZENER
- 81337 KB
- ·LC801
- POLYFET [Polyfet RF Devices]
- SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
- 38384 KB
- ·LC80101M
- SANYO [Sanyo Semicon Device]
- VICS LSI
- 166463 KB
- ·LC80A
- MICROSEMI [Microsemi Corporation]
- TRANSIENT ABSORPTION ZENER
- 81337 KB
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