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LD261

Features: GaAs infrared emitting diode, fabricated in a liquid phase epitaxy processHigh reliability Available in binsSame package as BPX 81ApplicationMiniature photointerruptersPunched tape readers Industrial electronicsFor control and drive circuitsSpecifications BezeichnungDescription S...

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SeekIC No. : 004392990 Detail

LD261: Features: GaAs infrared emitting diode, fabricated in a liquid phase epitaxy processHigh reliability Available in binsSame package as BPX 81ApplicationMiniature photointerruptersPunched tape readers...

LD261 Data Sheet

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Part Number:
LD261
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process
High reliability
Available in bins
 Same package as BPX 81


Application

Miniature photointerrupters
Punched tape readers
Industrial electronics
 For control and drive circuits


Specifications

Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg
40 ... + 80
°C
Sperrschichttemperatur
Junction temperature
Tj
80
°C
Sperrspannung
Reverse voltage
VR
5
V
Durchlaßstrom
Forward current
IF
50
mA
Stoßstrom, t 10 s, D = 0
Surge current
IFSM
1.6
A
Verlustleistung
Power dissipation
Ptot
70
mW
Wärmewiderstand
Thermal resistance
RthJA
RthJL
750
650
K/W
K/W



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