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LD262

Features: GaAs infrared emitting diode, fabricated in a liquid phase epitaxy processHigh reliabilitySame package as BPX 80 seriesApplicationl Miniature photointerruptersPunched tape-readersIndustrial electronicsFor control and drive circuitsSpecifications BezeichnungDescription SymbolSymb...

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SeekIC No. : 004392991 Detail

LD262: Features: GaAs infrared emitting diode, fabricated in a liquid phase epitaxy processHigh reliabilitySame package as BPX 80 seriesApplicationl Miniature photointerruptersPunched tape-readersIndustri...

LD262 Data Sheet

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Part Number:
LD262
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process
High reliability
Same package as BPX 80 series


Application

l Miniature photointerrupters
Punched tape-readers
Industrial electronics
 For control and drive circuits


Specifications

Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg
40 ... + 80
°C
Sperrschichttemperatur
Junction temperature
Tj
80
°C
Sperrspannung
Reverse voltage
VR
5
V
Durchlaßstrom
Forward current
IF
50
mA
Stoßstrom, t £ 10 ms, D = 0
Surge current
IFSM
1.6
A
Verlustleistung
Power dissipation
Ptot
70
mW
Wärmewiderstand
Thermal resistance
RthJA
RthJL
750
650
K/W
K/W



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