Purchase LET9060S, In-stock LET9060S From SeekIC.
Part Number: LET9060S
Description: The LET9060S is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. I...
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LET9060S
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DataSheet
General Description
LET9060S General Description
The LET9060S is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9060S boasts the excellent gain,linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060S's superior linearity performance makes it an ideal solution for base station applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optmized for RF needs and offers excellent RF performances and ease of assembly.
LET9060S Maximum Ratings
| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain-Source Voltage | 65 | V |
| VGS | Gate-Source Voltage | -0.5 to +15 | V |
| ID | Drain Current | 7 | A |
| PDISS | Power Dissipation (@ Tc = 70 °C) | 170 | W |
| Tj | Max. Operating Junction Temperature | 165 | |
| TSTG | Storage Temperature | -65 to +150 |
LET9060S Features
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 60 W with 17 dB gain @ 945 MHz / 26V
• NEW RF PLASTIC PACKAGE
• HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL with TR SUFFIX
• COMMON SOURCE CONFIGURATION
• POUT = 60 W with 17 dB gain @ 945 MHz / 26V
• NEW RF PLASTIC PACKAGE
• HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL with TR SUFFIX
LET9060S
PDF/DataSheet Download
- Datasheet: LET9060S
- File Size: 303363 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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LET9060S Relative Products
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