Purchase LET9130, In-stock LET9130 From SeekIC.
Part Number: LET9130
Description: The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power&nb...
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LET9130
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DataSheet
General Description
LET9130 General Description
The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applications requiring high linearity.
LET9130 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain-Source Voltage | 65 | V |
| VGS | Gate-Source Voltage | -0.5 to +15 | V |
| ID | Drain Current | 15 | A |
| PDISS | Power Dissipation (@ Tc = 70 °C) | 217 | W |
| Tj | Max. Operating Junction Temperature | 200 | |
| TSTG | Storage Temperature | -65 to +200 |
LET9130 Features
• IS-95 CDMA: 865-895 MHz / 28 V
POUT = 25 W
EFF. = 29 %
• EDGE: 920-960 MHz / 28 V
POUT = 45 W
EFF. = 38 %
• GSM: 920-960 MHz / 28 V
POUT = 135 W
EFF. = 51 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
POUT = 25 W
EFF. = 29 %
• EDGE: 920-960 MHz / 28 V
POUT = 45 W
EFF. = 38 %
• GSM: 920-960 MHz / 28 V
POUT = 135 W
EFF. = 51 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
LET9130
PDF/DataSheet Download
- Datasheet: LET9130
- File Size: 59014 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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