LF111-X

The LF111-X are monolithic sample-and-hold circuits which utilize BI-FET technology to obtain ultra-high dc accuracy with fast acquisition of signal and low droop rate. Operating as a unity gain follower, dc gain accuracy is
0.002% typical and acquisition time is as low as 6 s to 0.01%. A bipolar input stage is used to achieve low offset voltage and wide bandwidth.

Features of the LF111-X are:(1)1W Output Power; (2)Ultra-Miniature SMT Case; (3)3,000 VDC Isolation; (4)5V, 12V & 24V Inputs; (5)-40 °Cto +85°C Operation; (6)9 Standard Models; (7)2.0 MH MTBF Minimum; (8)Industry Standard Pin-Out

The absolute maximum ratings of the LF111-X can be summarized as:(1)Supply Voltage : ±18V;(2)Input Voltage : Equal to Supply Voltage;(3)Output Short Circuit Duration: Indefinite; (4)Power Dissipation: 500mW;(5)storage temperature:-65°C to +150°C;(6)Operating Temperature :-55 to 125°C. If you want to know more information such as the electrical characteristics about the LF111-X, please download the datasheet in www.seekic.com or www.chinaicmart.com.