Purchase LH28F020SU-N, In-stock LH28F020SU-N From SeekIC.
MFG:SHARP D/C:05+
Part Number: LH28F020SU-N
MFG: SHARP
D/C: 05+
Description: The LH28F020SU-N is a high performance 2M (2,097,152 bit) block erasable non-volati...
- Table of contents:
LH28F020SU-N
-
Suppliers
DataSheet
General Description
LH28F020SU-N General Description
The LH28F020SU-N is a high performance 2M (2,097,152 bit) block erasable non-volatile random access memory organized as 256K × 8. The LH28F020SU-N includes sixteen 16K (16,384) blocks. A chip memory map is shown in Figure 4.
The implementation of a new architecture, with many enhanced features, will improve the device operating characteristics and results in greater product reliability and ease of use.
Among the significant enhancements of the LH28F020SU-N80:
• 5 V Read, Write/Erase Operation (5 V VCC, 5.0 V VPP)
• Lower Power Capability
• Improved Write Performance
• Dedicated Block Write/Erase Protection
• Command-Controlled Memory Protection Set/Reset Capability
The LH28F020SU-N will be available in a 32-pin, 525 mil. SOP package. This form factor and pinout allow for very high board layout densities
LH28F020SU-N Maximum Ratings
Temperature Under Bias ....................... 0 to + 80
Storage Temperature ........................ -65 to + 125
*WARNING: Stressing the device beyond the "Absolute aximum Ratings" may cause permanent damage.These are
stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability.
LH28F020SU-N Features
• 256K * 8 Bit Configuration
• 5 V Write/Erase Operation (5 V VPP)
No Requirement for DC/DC Converter to Write Erase
• 80 ns Maximum Access Time
• 16 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
Command User Interface
Status Register
• System Performance Enhancement
Erase Suspend for Read
Two-Byte Write
Full Chip Erase
• Data Protection
Hardware Erase/Write Lockout during Power Transitions
Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 5 A (TYP.) ICC in CMOS Standby
• State-of-the-Art 0.55 m ETOX™ Flash Technology
• Packages
32-Pin, 525 mil. SOP Package
32-Pin, 1.2 mm * 8 mm * 20 mm TSOP (Type I) Package
LH28F020SU-N Connection Diagram
LH28F020SU-N
PDF/DataSheet Download
- Datasheet: LH28F020SU-N
- File Size: 247194 KB
- Manufacturer: SHARP [Sharp Electrionic Components]
- Click here to Download
- ·LH2011
- NSC [National Semiconductor]
- LH2011/LH2011B/LH2011C Dual Operational Amplifiers
- 871955 KB
- ·LH2011B
- NSC [National Semiconductor]
- LH2011/LH2011B/LH2011C Dual Operational Amplifiers
- 871955 KB
- ·LH2011C
- NSC [National Semiconductor]
- LH2011/LH2011B/LH2011C Dual Operational Amplifiers
- 871955 KB
- ·LH2108A
- LINER [Linear Technology]
- OPERATIONAL AMPLIFIERS
- 146084 KB
- ·LH2108A/883B
- LINER [Linear Technology]
- OPERATIONAL AMPLIFIERS
- 146084 KB
- ·LH2108AD
- LINER [Linear Technology]
- OPERATIONAL AMPLIFIERS
- 146084 KB
- ·LH2108AD/883B
- LINER [Linear Technology]
- OPERATIONAL AMPLIFIERS
- 146084 KB
- ·LH2108D
- LINER [Linear Technology]
- OPERATIONAL AMPLIFIERS
- 146084 KB
LH28F020SU-N Relative Products
LH28F020SU-L
The LH28F020SU-L is a high performance 2M (2,097,152 bit) block erasable non-volatile random access memory organized as 256K × 8. The LH28F020SU-L includes sixteen 16K (16,384) blocks. A chip memory map is shown in Figure 4.The implementation of a new archit...
LH28F016SUT-10
The LH28F016SUT-10 is a type of 16 Mbit, 5V single voltage flash memory which is a very high density,highest performance non-volatile read/write solution for solid-state storage applications. its symetrically blcoked architecture(100% compatible with LH28F00...
LH28F016SU
The LH28F016SU is a high performance 16M (16,777,216 bit) block erasable non-volatile random access memory organized as either 1M × 16 or 2M × 8. The LH28F016SU includes thirty-two 64K (65,536)blocks or thirty-two 32-KW (32,768) blocks. A chip memory map is ...
LH28F016SC-L
The LH28F016SC-L/SCH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capabili...
LH28F016SCH-L
The LH28F016SCH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability pr...
LH28F016SA
The LH28F016SA is a high performance 16M (16,777,216 bit) block erasable non-volatile random access memory organized as either 1M × 16 or 2M × 8. The LH28F016SA includes thirty-two 64K (65,536) blocks or thirty-two 32-KW (32,768) blocks. A chip memory map is...
Hotspot Suppliers Product
DMK2308-000
Price: 1.5-2 USD
540-025, High Volume, Low Series Resistance, 100 GHz, 1 mA, 780mV, 100GHz
AD9832BRUZ-REEL7
Price: 1-1 USD
IC DDS 10BIT 25MHZ CMOS 16TSSOP - AD9832BRUZ-REEL7
FZT649TA
Price: 0.08-0.15 USD
SOT223, high performance transistor, 25V
59-23BUWD/TR8
Price: 1-2 USD
Luminosity white Color, LED , SMD
XCS10-3VQG100I
Price: 20-30 USD
XL families, field programmable Gate array, TQFP100, –0.5 to VCC +0.5 V, ASIC
HA1E-DC24V
Price: 1-1 USD
COST SAVING SUBMINIATURE PC BOARD RELAYS, amber sealed type
UA759U1C
Price: 0.1-0.5 USD
monolithic operational amplifier, T0-220, ±18V, 325mA, UA759U1C, Fairchild Semiconductor
RSN35H2
Price: 10-30 USD
RSN35H2, HYB-14, Integrated Circuits, Sanyo Semicon Device
T491C226M025AT
Price: 0.1-100 USD
SMD, Tantalum capacitor, 22 uF, 25 Volts, 2.5 mm, Kemet Corporation, T491C226M025AT
E3F3-D81
Price: 10-20 USD
Omron Photoelectric Sensor E3F3-D81
SST29SF040-55-4C-NHE
Price: 0.8-1 USD
2 Mbit / 4 Mbit (x8), Small-Sector Flash, 32-lead PLCC, -0.5V to VDD+0.5V
BPF-A580+
Price: 0.58-0.7 USD
Bandpass Filter, SMD, 0.5W
