LH51BV1000J Selling Leads, Price trend, LH51BV1000J DataSheet download, circuit diagram from SeekIC.com

Features: ` Access time: 70 ns (MAX.)` Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 ms) Standby: 60 mA (MAX.)` Data Retention: 1.0 mA (MAX.) (VCCDR = 3 V, TA = 25)` Single power supply: 2.7 V to 3.6 V` Operating temperature: -25 to +85` Fully-static operation` Three-state...

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SeekIC No. : 004394183 Detail

LH51BV1000J: Features: ` Access time: 70 ns (MAX.)` Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 ms) Standby: 60 mA (MAX.)` Data Retention: 1.0 mA (MAX.) (VCCDR = 3 V, TA = 25)` Single ...

LH51BV1000J Data Sheet

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Part Number:: LH51BV1000J
Supply Ability:: 5000

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1~5000

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Negotiable

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Product Details

Description

Features:

` Access time: 70 ns (MAX.)
` Current consumption:
    Operating: 30 mA (MAX.)
    5 mA (MAX.) (t_RC, t_WC = 1 ms)
    Standby: 60 mA (MAX.)
` Data Retention:
    1.0 mA (MAX.) (VCCDR = 3 V, TA = 25)
` Single power supply: 2.7 V to 3.6 V
` Operating temperature: -25 to +85
` Fully-static operation
` Three-state output
` Not designed or rated as radiation hardened
` Package: 32-pin 6*10 mm CSP
` N-type bulk silicon

Pinout

Connection Diagram

Specifications

PARAMETER	SYMBOL	RATING	UNIT	NOTE
Supply voltage	Vcc	0.5 to +4.6	V	1
Input voltage	V_IN	0.5 to VCC + 0.3	V	1,2
Operating temperature	Topr	25 to +85		-
Storage temperature	T_stg	65 to +150		-

NOTE:
1. The maximum applicable voltage on any pin with respect to GND.
2. Undershoot of 3.0 V is allowed width of pulse below 50 ns.

Description

The LH51BV1000JY is a static RAM organized as 131,072×8 bits which provides low power standby mode. It is fabricated using silicon-gate CMOS process technology.

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LH51BV1000J

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