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MFG:SHARP D/C:05+
Part Number: LH51BV1000J
MFG: SHARP
D/C: 05+
Description: The LH51BV1000JY is a static RAM organized as 131,072×8 bits which provides low power standby mode. It...
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LH51BV1000J
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General Description
LH51BV1000J General Description
The LH51BV1000JY is a static RAM organized as 131,072×8 bits which provides low power standby mode. It is fabricated using silicon-gate CMOS process technology.
LH51BV1000J Maximum Ratings
| PARAMETER |
SYMBOL |
RATING |
UNIT |
NOTE |
| Supply voltage |
Vcc |
0.5 to +4.6 |
V | 1 |
| Input voltage |
VIN |
0.5 to VCC + 0.3 |
V |
1,2 |
| Operating temperature |
Topr |
25 to +85 |
- | |
| Storage temperature |
Tstg |
65 to +150 |
- |
NOTE:
1. The maximum applicable voltage on any pin with respect to GND.
2. Undershoot of 3.0 V is allowed width of pulse below 50 ns.
LH51BV1000J Features
` Access time: 70 ns (MAX.)
` Current consumption:
Operating: 30 mA (MAX.)
5 mA (MAX.) (tRC, tWC = 1 ms)
Standby: 60 mA (MAX.)
` Data Retention:
1.0 mA (MAX.) (VCCDR = 3 V, TA = 25)
` Single power supply: 2.7 V to 3.6 V
` Operating temperature: -25 to +85
` Fully-static operation
` Three-state output
` Not designed or rated as radiation hardened
` Package: 32-pin 6*10 mm CSP
` N-type bulk silicon
LH51BV1000J Connection Diagram
LH51BV1000J
PDF/DataSheet Download
- Datasheet: LH51BV1000J
- File Size: 79856 KB
- Manufacturer: SHARP [Sharp Electrionic Components]
- Click here to Download
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