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LL103A
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DataSheet
General Description
LL103A Maximum Ratings
| Symbol | Value | Unit | |
| Peak Inverse Voltage LL103A LL103B LL103C |
VRRM VRRM VRRM |
40 30 20 |
V |
| Power Dissipation (Infinite Heatsink) TC = 3/8² from Body derates at 4 mW/ to 0 at 125 |
Ptot | 4001) | mW |
| Junction Temperature | Tj | 125 | |
| Storage Temperature Range | TS | 55 to +150 | |
| Single Cycle Surge 60-Hz Sine Wave |
IFSM | 15 | A |
| 1) Valid provided that electrodes are kept at ambient temperature. | |||
LL103A Features
·For general purpose applications. The LL103A, B, C is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.
·The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems.
·This diode is also available in DO-35 case with the type designation SD103A, B, C, and in the SOD-123 case with type designation SD103AW, SD103BW, SD103CW.
LL103A
PDF/DataSheet Download
- Datasheet: LL103A
- File Size: 134562 KB
- Manufacturer: GE [General Semiconductor]
- Click here to Download
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LL103A Relative Products
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LL101C Small Signal Schottky Diodes
LL101B
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LL101A/LL101B/LL101C
LL101A
LL101A Small Signal Schottky Diodes
LL1.5
LL-0283-20E
The LL-0283-20E is designed as one kind of compact, single phase, high current device that is very useful in power control systems. This "E" configuration is identical to our 283 series except that the ground coil has been eliminated for use in "Stand Alone"...
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