LL103C

Features: ·For general purpose applications. The LL103A, B, C is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.·The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast sw...

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SeekIC No. : 004394396 Detail

LL103C: Features: ·For general purpose applications. The LL103A, B, C is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.·The low forward voltage drop and fast swit...

floor Price/Ceiling Price

Part Number:
LL103C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2020/3/30

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Product Details

Description



Features:

·For general purpose applications. The LL103A, B, C is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.
·The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems.
·This diode is also available in DO-35 case with the type designation SD103A, B, C, and in the SOD-123 case with type designation SD103AW, SD103BW, SD103CW.






Specifications

Symbol Value Unit
Peak Inverse Voltage

LL103A
LL103B
LL103C
VRRM
VRRM
VRRM
40
30
20

V
V
V

Power Dissipation (Infinite Heatsink)
TC = 3/8² from Body
derates at 4 mW/ to 0 at 125
Ptot 4001) mW
Junction Temperature Tj 125
Storage Temperature Range TS 55 to +150
Single Cycle Surge
60-Hz Sine Wave
IFSM 15 A
1) Valid provided that electrodes are kept at ambient temperature.





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