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LN172

Features: `High-power output, high-efficiency : PO = 12 mW (typ.)`Light emitting spectrum suited for silicon photodetectors : P = 900 nm (typ.)`Good optical power output linearity with respect to input current`Wide directivity : = 100 deg. (typ.)`Long lifetime, high reliabilitySpecifications ...

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LN172: Features: `High-power output, high-efficiency : PO = 12 mW (typ.)`Light emitting spectrum suited for silicon photodetectors : P = 900 nm (typ.)`Good optical power output linearity with respect to in...

LN172 Data Sheet

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Part Number:
LN172
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`High-power output, high-efficiency : PO = 12 mW (typ.)
`Light emitting spectrum suited for silicon photodetectors : P = 900 nm (typ.)
`Good optical power output linearity with respect to input current
`Wide directivity : = 100 deg. (typ.)
`Long lifetime, high reliability


Specifications

Parameter
Symbol
Ratings
Unit
Power dissipation
PD
170
mW
Forward current (DC)
IF
100
mW
Pulse forward current
IFP*
2
A
Reverse voltage (DC)
VR
3
V
Operating ambient temperature
Topr
25 to +85
Storage temperature
Tstg
30 to +100
* f = 100 Hz, Duty cycle = 0.1 %


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