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Part Number: LP3000SOT89
Description: `The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/In...
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LP3000SOT89
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DataSheet
General Description
LP3000SOT89 General Description
`The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available in die form or in other packages.
`Typical applications include PCS/Cellular low-voltage, high-efficiency amplifiers.
LP3000SOT89 Maximum Ratings
|
Parameter |
Symbol |
Test Conditions |
|
Max |
Units |
|
Drain-Source Voltage |
VDS |
TAmbient = 22 ± 3 |
|
7 |
V |
|
Gate-Source Voltage |
VGS |
TAmbient = 22 ± 3 |
|
-4 |
V |
|
Drain-Source Current |
IDS |
TAmbient = 22 ± 3 |
|
IDSS |
mA |
|
Gate Current |
IG |
TAmbient = 22 ± 3 |
|
30 |
mA |
|
RF Input Power |
PIN |
TAmbient = 22 ± 3 |
|
1 |
W |
|
Channel Operating Temperature |
TCH |
TAmbient = 22 ± 3 |
-65 |
175 |
|
|
Storage Temperature |
TSTG |
- |
|
175 |
|
|
Total Power Dissipation |
PTOT |
TAmbient = 22 ± 3 |
|
3.75 |
W |
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: PTOT º (PDC + PIN) POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
PTOT= 3.75W (0.025W/°C) x THS
where TPACK = source tab lead temperature..
` This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
LP3000SOT89 Features
· 29 dBm Output Power at 1-dB Compression at 1.8 GHz
· 15 dB Power Gain at 1.8 GHz
· 1.3 dB Noise Figure
· 46 dBm Output IP3 at 1.8 GHz
· 55% Power-Added Efficiency
· 15 dB Power Gain at 1.8 GHz
· 1.3 dB Noise Figure
· 46 dBm Output IP3 at 1.8 GHz
· 55% Power-Added Efficiency
LP3000SOT89 Typical Application
·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.
LP3000SOT89
PDF/DataSheet Download
- Datasheet: LP3000SOT89
- File Size: 45215 KB
- Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]
- Click here to Download
- ·LP3000
- FILTRONIC [Filtronic Compound Semiconductors]
- 2 W POWER PHEMT
- 50942 KB
- ·LP3000P100
- FILTRONIC [Filtronic Compound Semiconductors]
- PACKAGED 2W POWER PHEMT
- 49051 KB
- ·LP3000SOT89-1
- FILTRONIC [Filtronic Compound Semiconductors]
- LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
- 45215 KB
- ·LP3000SOT89-2
- FILTRONIC [Filtronic Compound Semiconductors]
- LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
- 45215 KB
- ·LP3000SOT89-3
- FILTRONIC [Filtronic Compound Semiconductors]
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- 45215 KB
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LP3000SOT89 Relative Products
LP3000P100
`The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The r...
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`The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 3000 mm Schottky barrier gate. The recessed "mushroom" gate stru...
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