Purchase LP3000, In-stock LP3000 From SeekIC.
Part Number: LP3000
Description: `The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseu...
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LP3000
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DataSheet
General Description
LP3000 General Description
`The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 3000 mm Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in a ceramic flanged package (P100) and ball grid array package.
`Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.
LP3000 Maximum Ratings
|
SYMBOL |
PARAMETER |
RATING1 |
|
VDS |
Drain-Source Voltage |
12V |
|
VGS |
Gate-Source Voltage |
-5V |
|
IDS |
Drain-Source Current |
2 x IDSS |
|
IG |
Gate Current |
120 mA |
|
PIN |
RF Input Power |
1.2 W |
|
TCH |
Channel Temperature |
175 |
|
TSTG |
Storage Temperature |
-65/175 |
|
PT |
Power Dissipation |
6.0W3,4 |
2. Recommended Continuous Operating Limits should be observed for reliable device operation.
3. Power Dissipation defined as: PT º (PDC + PIN) - POUT, where: PDC = DC bias power, POUT = RF output power, and
PIN = RF input power.
4. Power Dissipation to be de-rated as follows:
5. Specifications subject to change without notice.
LP3000 Features
· +33.5 dBm Typical Power at 18 GHz
· 7 dB Typical Power Gain at 18 GHz
· +30.5 dBm at 3.3V Battery Voltage
· Low Intermodulation Distortion
· 45% Power-Added-Efficiency at 18 GHz
· 7 dB Typical Power Gain at 18 GHz
· +30.5 dBm at 3.3V Battery Voltage
· Low Intermodulation Distortion
· 45% Power-Added-Efficiency at 18 GHz
LP3000 Typical Application
`The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron
Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 3000 mm Schottky barrier gate. The
recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in a ceramic flanged package (P100) and ball grid array package.
`Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.
Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 3000 mm Schottky barrier gate. The
recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available with plated source via-holes (LPV 3000) as an option for improved high-frequency performance. Also available in a ceramic flanged package (P100) and ball grid array package.
`Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LPV 3000/LP 3000 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.
LP3000
PDF/DataSheet Download
- Datasheet: LP3000
- File Size: 50942 KB
- Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]
- Click here to Download
- ·LP3000P100
- FILTRONIC [Filtronic Compound Semiconductors]
- PACKAGED 2W POWER PHEMT
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- ·LP3000SOT89
- FILTRONIC [Filtronic Compound Semiconductors]
- LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
- 45215 KB
- ·LP3000SOT89-1
- FILTRONIC [Filtronic Compound Semiconductors]
- LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
- 45215 KB
- ·LP3000SOT89-2
- FILTRONIC [Filtronic Compound Semiconductors]
- LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
- 45215 KB
- ·LP3000SOT89-3
- FILTRONIC [Filtronic Compound Semiconductors]
- LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
- 45215 KB
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- ·LP311JG
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