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Part Number: LP3000P100

 

 

 

 

Description: `The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InG...


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LP3000P100 General Description


`The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available in die form or in other packages.

LP3000P100 Maximum Ratings

Parameter

Symbol

Test Conditions

 

Max

Units

Drain-Source Voltage

VDS

TAmbient = 22 ± 3

 

12

V

Gate-Source Voltage

VGS

TAmbient = 22 ± 3

 

-4

V

Drain-Source Current

IDS

TAmbient = 22 ± 3

 

IDSS

mA

Gate Current

IG

TAmbient = 22 ± 3

 

30

mA

RF Input Power

PIN

TAmbient = 22 ± 3

 

700

mW

Channel Operating Temperature

TCH

TAmbient = 22 ± 3

-65

175

Storage Temperature

TSTG

-

 

175

Total Power Dissipation

PTOT

TAmbient = 22 ± 3

 

3.0

W

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: PTOT º (PDC + PIN) POUT, where
                                                     PDC: DC Bias Power
                                                     PIN: RF Input Power
                                                     POUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
                                                     PTOT= 3.0W (0.020W/°C) x THS
                                                      where THS = heatsink or ambient temperature.
` This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.

LP3000P100 Features

· 33 dBm Output Power at 1-dB Compression at 15 GHz
· 8 dB Power Gain at 15 GHz
· 60% Power-Added Efficiency

LP3000P100 Typical Application

·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.

LP3000P100 datasheet

LP3000P100
PDF/DataSheet Download

  • Datasheet: LP3000P100
  • File Size: 49051 KB
  • Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]
  • Click here to Download

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