LP750P100

Features:

· 41 dBm IP3 at 12 GHz
· 27.5 dBm P-1dB at 12 GHz
· 10.5 dB Power Gain at 12 GHz
· 2.5 dB Noise Figure at 12 GHz
· 60% Power-Added-Efficiency


Application

Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter	Symbol	Test Conditions		Max	Units
Drain-Source Voltage	VDS	TAmbient = 22 ± 3		12	V
Gate-Source Voltage	VGS	TAmbient = 22 ± 3		-4	V
Drain-Source Current	IDS	TAmbient = 22 ± 3		200% IDSS	mA
Gate Current	IG	TAmbient = 22 ± 3		35	mA
RF Input Power	PIN	TAmbient = 22 ± 3		250	mW
Channel Operating Temperature	TCH	TAmbient = 22 ± 3		175
Storage Temperature	TSTG	-	-65	175

Notes: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.


Description

`The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power/low-noise applications. The LP750 also features Si₃N₄ passivation and is available in die form or in surface-mount packages.

`The LP750P100 is designed for medium-power, linear amplification. This device is suitable for applications in commercial and military environments, and it is appropriate to be used as a medium power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high efficiency amplifiers, and WLL systems.