LP7512

Features:

· 0.6 dB Noise Figure at 12 GHz
· 12 dB Associated Gain at 12 GHz
· Low DC Power Consumption
· Excellent Phase Noise


Application

·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	VDS	TAmbient = 22 ± 3 °C		4	V
Gate-Source Voltage	VGS	TAmbient = 22 ± 3 °C		-2	V
Drain-Source Current	IDS	TAmbient = 22 ± 3 °C		IDSS	mA
Gate Current	IG	TAmbient = 22 ± 3 °C		5	mA
RF Input Power	PIN	TAmbient = 22 ± 3 °C		50	mW
Channel Operating Temperature	TCH	TAmbient = 22 ± 3 °C		175
Storage Temperature	TSTG	-	-65	175
Total Power Dissipation	PTOT	TAmbient = 22 ± 3 °C		460	mW

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: P_TOT º (P_DC + P_IN) P_OUT, where
                                                    P_DC: DC Bias Power
                                                    P_IN: RF Input Power
                                                    P_OUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25:
                                                   P_TOT= 460mW (3.1mW/) x T_HS
                                                   where T_HS = heatsink or ambient temperature.


Description

`The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for ultra low noise and usable gain to 40 GHz. The LP7512 also features Si₃N₄ passivation and is available in a variety of packages.

`Typical applications include low noise receiver preamplifiers for commercial applications including wireless systems and radio link systems.