LP7512P70

Features:

· 0.7 dB Noise Figure at 12 GHz
· 12 dB Associated Gain at 12 GHz
· 0.4 dB Noise Figure at 2 GHz
· 18 dB Associated Gain at 2 GHz
· Low DC Power Consumption: 30mW


Application

·Typical applications include low noise receiver preamplifiers in wireless systems.


Specifications

Parameter	Symbol	Test Conditions		Max	Units
Drain-Source Voltage	VDS	TAmbient = 22 ± 3		4	V
Gate-Source Voltage	VGS	TAmbient = 22 ± 3		-2	V
Drain-Source Current	IDS	TAmbient = 22 ± 3		IDSS	mA
Gate Current	IG	TAmbient = 22 ± 3		2	mA
RF Input Power	PIN	TAmbient = 22 ± 3		50	mW
Channel Operating Temperature	TCH	TAmbient = 22 ± 3		175
Storage Temperature	TSTG	-	-65	175
Total Power Dissipation	PTOT	TAmbient = 22 ± 3		300	mW

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: P_TOT º (P_DC + P_IN) P_OUT, where
                                                    P_DC: DC Bias Power
                                                    P_IN: RF Input Power
                                                    P_OUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
                                                    P<sub>TOT</sub>= 300mW (3.5mW/°C) x T<sub>HS</sub>
                                                    where T<sub>HS</sub> = heatsink or ambient temperature.
` This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.


Description

`The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for optimum low noise performance. The LP7512's active areas are passivated with Si₃N₄, and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package.

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