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Part Number: LQ821

 

 

 

 

Description: ·Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications....


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LQ821 General Description


·Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

·Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

·"Polyfet" TMprocess features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.

LQ821 Maximum Ratings

Total
Device
Dissipation

Junction to
Case Thermal
Resistance

Maximum
Junction
Temperature

Storage
Temperature

DC Drain
Current

Drain to
Gate
Voltage

Drain to
Source
Voltage

Gate to
Source
Voltage

80Watts

1.80 /W

200

-65 to 150

8.0A

36V

36V

20V

LQ821 datasheet

LQ821
PDF/DataSheet Download

Find LQ821 Suppliers

  • ·LQ801
  • POLYFET [Polyfet RF Devices] 
  • SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 
  • 36234 KB
  • LQ801 Datasheet Download

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