LRS1331 General Description
The LRS1331 is a combination memory organized as 1,048,576 × 16-bit flash memory and 262,144 × 16-bit static RAM in one package.
LRS1331 Features
• Flash Memory and SRAM
• Stacked Die Chip Scale Package
• 72-ball 8 mm * 11 mm CSP plastic package
• Power supply: 2.7 V to 3.6 V
• Operating temperature: -25°C to +85°C
• Flash Memory
Access time (MAX.): 90 ns
Operating current (MAX.) (The current for F-VCC pin and F-VCCW pin):
Read: 25 mA (tCYCLE = 200 ns)
Word write: 57 mA
Block erase: 42 mA
Standby current (the current for F-VCC pin): 15 A (MAX. F-RP GND ± 0.2 V)
Optimized array blocking architecture
Two 4K-word boot blocks
Six 4K-word parameter blocks
Thirty-one 32K-word main blocks
Bottom boot location
Extended cycling capability
100,000 block erase cycles
Enhanced automated suspend options
Word write suspend to read
Block erase suspend to word write
Block erase suspend to read
• SRAM
Access time (MAX.): 85 ns
Operating current: 45 mA (MAX.)
Standby current: 15 A (MAX.)
Data retention current: 2 A (MAX.)

- ·LRS1302
- SHARP [Sharp Electrionic Components]
- Stacked Chip 8M Flash and 1M SRAM
- 3489088 KB

- ·LRS13023
- SHARP [Sharp Electrionic Components]
- Stacked Chip 8M Flash and 1M SRAM
- 3489088 KB

- ·lrs1306
- sharp
- IC,MIXED MEMORY,FLASH+SRAM,HYBRID,TSSOP,48PIN,PLASTIC
- 3378981 KB

- ·lrs1310
-
- IC,MIXED MEMORY,FLASH+SRAM,HYBRID,BGA,56PIN,PLASTIC
- 3973631 KB

- ·LRS1329
- SHARP [Sharp Electrionic Components]
- Stacked Chip 16M Flash and 2M SRAM
- 1347638 KB

- ·LRS1329A
-
- MIXED MEMORY,SRAM+EEPROM,HYBRID,BGA,72PIN,PLASTIC
- 793038 KB

- ·LRS1337
- SHARP [Sharp Electrionic Components]
- Stacked Chip 32M Flash Memory and 4M SRAM
- 990776 KB

- ·LRS1338A
- SHARP [Sharp Electrionic Components]
- Stacked Chip 8M Flash Memory and 2M SRAM
- 223268 KB

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