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Part Number: LTA170D200F

 

 

 

 

Description: The LTA170D200F is designed as one kind of high-speed 134,217,728 bits synchronous dynamic random-access memory that...


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LTA170D200F General Description


The LTA170D200F is designed as one kind of high-speed 134,217,728 bits synchronous dynamic random-access memory that has some points of features:(1)10.7 MHz; (2)Series LT or LT A10; (3)Consumer electronics; (4)Individual specification: A5, S2, S3 or J.

The absolute maximum ratings of the LTA170D200F can be summarized as:(1)Voltage on power supply pin relative to VSS: -0.5 to +3.6 V;(2)Voltage on any pin relative to VSS: -0.5 to +3.6 V;(3)Short circuit output current: 50 mA;(4)Power dissipation: 1 W;(5)Storage temperature: -55 to +125 °C.

The electrical characteristics of the LTA170D200F can be summarized as:(1)Supply voltage: 2.3 to 2.7 V;(2)Supply voltage for DQ, DQS: 2.3 to 2.7 V;(3)Input reference voltage: 0.49 * VDDQ to 0.51 * VDDQ V;(4)Termination voltage: VREF-0.04 to VREF+0.04 V;(5)High level dc input voltage: VREF+0.18 to VDD+0.3 V;(6)Low level dc input voltage: -0.3 to VREF-0.18 V;(7)Input differential voltage (CLK and /CLK): 0.36 to VDDQ+0.6 V;(8)Input crossing point voltage (CLK and /CLK): 0.5 * VDDQ0.2 to 0.5 * VDDQ+0.2 V;(9)Operating ambient temperature:0 to 70 °C. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.

LTA170D200F datasheet

LTA065A041F
PDF/DataSheet Download

  • Datasheet: LTA065A041F
  • File Size: 165697 KB
  • Manufacturer: TOSHIBA [Toshiba Semiconductor]
  • Click here to Download

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