Features: · Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR· Self-aligned process entirely ion implanted· Gold metallization realizes very stable characteristics and excellent lifetime· Input matching cell improves input impedance and allows an ...
LTE21025R: Features: · Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR· Self-aligned process entirely ion implanted· Gold metallization realizes very stable...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | 40 | V |
VCER | collector-emitter voltage | RBE = 70W | - | 20 | V |
VCEO | emitter-base voltage | open base | - | 16 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC | DC collector current (DC) | - | 800 | mA | |
Ptot | total power dissipation | Tmb<= 75 °C | - | 8 | W |
Tstg | storage temperature | -65 | +200 | °C | |
Tj | operating junction temperature | - | 200 | °C | |
Tsld | soldering temperature | at 0.3 mm from ceramic; t <= 10 s |
- | 235 | °C |
LTE21025R, NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.