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LTE21009R

Features: · Diffused emitter ballasting resistors· Self-aligned process entirely ion implanted and gold sandwich metallization· optimum temperature profile· excellent performance and reliability· Input matching cell improves input impedance and facilitates the design of wideband circuits.Applicati...

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SeekIC No. : 004402722 Detail

LTE21009R: Features: · Diffused emitter ballasting resistors· Self-aligned process entirely ion implanted and gold sandwich metallization· optimum temperature profile· excellent performance and reliability· In...

LTE21009R Data Sheet

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Part Number:
LTE21009R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

· Diffused emitter ballasting resistors
· Self-aligned process entirely ion implanted and gold sandwich metallization
· optimum temperature profile
· excellent performance and reliability
· Input matching cell improves input impedance and facilitates the design of wideband circuits.


Application

· Common emitter class-A linear power amplifiers up to 4.2 GHz.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCER collector-emitter voltage RBE = 100W - 35 V
VCEO emitter-base voltage open base - 16 V
VEBO emitter-base voltage open collector - 3 V
IC DC collector current (DC)   - 250 mA
Ptot total power dissipation Tmb £ 75 °C - 4 W
Tstg storage temperature   -65 +200 °C
Tj operating junction temperature   - 200 °C
Tsld soldering temperature up to 0.3 mm from case;
t £ 10 s		 - 235 °C



Description

LTE21009R, NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.




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