Position: Home  > All Categories> Integrated Circuits (ICs) > LTE21009R

LTE21009R

Features: · Diffused emitter ballasting resistors· Self-aligned process entirely ion implanted and gold sandwich metallization· optimum temperature profile· excellent performance and reliability· Input matching cell improves input impedance and facilitates the design of wideband circuits.Applicati...

product image

LTE21009R Picture
See larger image
SeekIC No. : 004402722 Detail

LTE21009R: Features: · Diffused emitter ballasting resistors· Self-aligned process entirely ion implanted and gold sandwich metallization· optimum temperature profile· excellent performance and reliability· In...

LTE21009R Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
LTE21009R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Diffused emitter ballasting resistors
· Self-aligned process entirely ion implanted and gold sandwich metallization
· optimum temperature profile
· excellent performance and reliability
· Input matching cell improves input impedance and facilitates the design of wideband circuits.


Application

· Common emitter class-A linear power amplifiers up to 4.2 GHz.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCER collector-emitter voltage RBE = 100W - 35 V
VCEO emitter-base voltage open base - 16 V
VEBO emitter-base voltage open collector - 3 V
IC DC collector current (DC)   - 250 mA
Ptot total power dissipation Tmb £ 75 °C - 4 W
Tstg storage temperature   -65 +200 °C
Tj operating junction temperature   - 200 °C
Tsld soldering temperature up to 0.3 mm from case;
t £ 10 s		 - 235 °C



Description

LTE21009R, NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optical Inspection Equipment
AA924
A21K4B
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Discrete Semiconductor Products
T508N12TOF
MUR20040
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Test Equipment
TOP853
TOP2005
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more