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Part Number: LY625128
Description: The LY625128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words ...


Description: The LY625128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words ...
The LY625128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.
The LY625128 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application.
The LY625128 operates from a single power supply of 4.5V ~ 5.5V and all inputs and outputs are fully TTL compatible
| PARAMETER | SYMBOL | RATING | UNIT |
| Terminal Voltage with Respect to VSS | VTERM | -0.5 to 6.5 | V |
| Operating Temperature | TA | 0 to 70(C grade) | |
| -20 to 80(E grade) | |||
| -40 to 85(I grade) | |||
| Storage Temperature | TSTG | -65 to 150 | |
| Power Dissipation | PD | 1 | W |
| DC Output Current | IOUT | 50 | mA |
| Soldering Temperature (under 10 sec) | TSOLDER | 260 |
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
LY625128
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