Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 230 Watts 0.75/W 200 -65to150 13.5A 70V 70V 20V Descriptio...
LZ402: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toS...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
230 Watts |
0.75/W |
200 |
-65to150 |
13.5A |
70V |
70V |
20V |
Silicon VDMOS and LDMOS transistors LZ402 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others."Polyfet" TMprocess features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.