Le79555

Storage temperature ................ 55°C to +150°C
     V_CC with respect to AGND......... 0.4 V to +7.0 V
V_BAT1, V_BAT2 with respect to AGND:
     Continuous................................. +0.4 V to 70 V
     10 ms ......................................... +0.4 V to 75 V
BGND with respect to AGND.................. +3 V to 3 V
A(TIP) or B(RING) to BGND:
     Continuous .......................................V_BAT to +1 V
     10 ms (f = 0.1 Hz) ......................... 70 V to +5 V
     1 s (f = 0.1 Hz) ............................ 80 V to +8 V
     250 ns (f = 0.1 Hz) ...................... 90 V to +12 V
Current from A(TIP) or B(RING)..................±150 mA
RINGOUT/RYOUT1,2 current............................50 mA
RINGOUT/RYOUT1,2 voltage .............. BGND to +7 V
RINGOUT/RYOUT1,2 transient .......... BGND to +10 V
DA and DB inputs
    Voltage on ring-trip inputs ..................V_BAT to 0 V
    Current into ring-trip inputs .....................±10 mA
C3C1,D2D1, BATSW, CHCLK
     Input voltage .....................0.4 V to V_CC + 0.4 V
Maximum power dissipation, continuous,
T_A = 70°C, No heat sink (See note)
     In 44-pin TQFP package................................1.4 W
Thermal Data:....................................................... _JA
In 44-pin TQFP package......................... 52°C/W typ
ESD immunity/pin (HBM) ..................................1500 V

Note: Thermal limiting circuitry on-chip will shut down the circuit at a junction temperature of about 165°C. The device
should never see this temperature and operation above 145°C junction temperature may degrade device reliability.

Stresses above those listed under Absolute Maximum Ratings may cause permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability.