M25P16-VMW6G

The M25P16-VMW6G is designed as one kind of 16 Mbit, Low Voltage, Serial Flash Memory device that has some points of features: (1)16 Mbit of Flash memory; (2)2.7 V to 3.6 V single supply voltage; (3)SPI bus compatible serial interface; (4)75 MHz clock rate (maximum); (5)VPP = 9 V for Fast Program/Erase mode (optional); (6)Page Program (up to 256 bytes) in 0.64 ms (typical); (7)Sector Erase (512 Kbit) in 0.6 s (typical); (8)Deep Power-down mode 1 A (typical); (9)Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits; (10)More than 100 000 Erase/Program cycles per sector; (11)More than 20 year data retention.

The Page Program (PP) instruction  M25P16-VMW6G allows bits to be reset from 1 to 0. Before this can be applied, the bytes of memory need to have been erased to all 1s (FFh). This can be achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the entire memory, using the Bulk Erase (BE) instruction.

The absolute maximum ratings of the M25P16-VMW6G can be summarized as:(1)Storage temperature: -65 to 150 °C;(2)Lead temperature during soldering: -;(3)Input and output voltage (with respect to ground): -0.6 to Vcc+0.6 V;(4)Supply voltage: -0.6 to 4.0 V;(5)Electrostatic discharge voltage (human body model): -2000 to 2000 V;(6)Fast Program/Erase voltage: -0.2 to 10.0 V. If you want to know more information such as the electrical characteristics about the M25P16-VMW6G, please download the datasheet in www.seekic.com or www.chinaicmart.com.