M25P80-VMW6TG

IC FLASH 8MBIT 75MHZ 8SOIC

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SeekIC No. : 003557111 Detail

M25P80-VMW6TG: IC FLASH 8MBIT 75MHZ 8SOIC

floor Price/Ceiling Price

US $ .52~.67 / Piece | Get Latest Price
Part Number:
M25P80-VMW6TG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~50
  • 50~100
  • 100~250
  • 250~500
  • Unit Price
  • $.67
  • $.61
  • $.6
  • $.6
  • $.54
  • $.53
  • $.52
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Series: Forté™ Manufacturer: Micron Technology Inc
Output Power : 90 mW Format - Memory: FLASH
Memory Type: FLASH - Nor Memory Size: 8M (1M x 8)
Speed: 75MHz Interface: SPI Serial
Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C
Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO W    

Description

Operating Temperature: -40°C ~ 85°C
Packaging: Cut Tape (CT)Alternate Packaging
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Format - Memory: FLASH
Interface: SPI Serial
Voltage - Supply: 2.7 V ~ 3.6 V
Memory Size: 8M (1M x 8)
Speed: 75MHz
Series: Forté™
Manufacturer: Micron Technology Inc
Memory Type: FLASH - Nor
Supplier Device Package: 8-SO W


Pinout

  Connection Diagram


Description

The M25P80-VMW6TG is designed as one kind of 8 Mbit, low voltage, page-erasable serial flash memory device that can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. And this device can be erased a page at a time, using the Page Erase instruction, a sector at a time, using the Sector Erase instruction, or as a whole, using the Bulk Erase instruction.

Features of the M25P80-VMW6TG are:(1)Industrial Standard SPI Pin-out; (2)8 Mbits of Page-Erasable Flash Memory; (3)Page Write (up to 256 Bytes) in 11ms (typical); (4)Page Program (up to 256 Bytes) in 1.2ms (typical); (5)Page Erase (256 Bytes) in 10ms (typical); (6)Sector Erase (512 Kbits); (7)Bulk Erase (8 Mbits); (8)2.7 to 3.6V Single Supply Voltage; (9)SPI Bus Compatible Serial Interface; (10)50MHz Clock Rate (maximum); (11)Deep Power-down Mode 1A (typical); (12)Electronic Signature JEDEC Standard Two-Byte Signature; (13)(8014h); (14)More than 100,000 Write Cycles; (15)More than 20 Year Data Retention; (16)Hardware Write Protection of the Top Sector (64KB); (17)Software Write Protection on a 64KByte Sector Basis; (18)Software Write Protection on a 4KByte Subsector Basis for Sector 0 and Sector 15.

The absolute maximum ratings of the M25P80-VMW6TG can be summarized as:(1)Storage Temperature: -65 to 150 °C;(2)Lead Temperature during Soldering: - °C;(3)Input and Output Voltage (with respect to Ground): -0.6 to 4.0 V;(4)Supply Voltage: -0.6 to 4.0 V;(5)Electrostatic Discharge Voltage (Human Body model): -2000 to 2000 V. If you want to know more information such as the electrical characteristics about the M25P80-VMW6TG, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationM25P80-VMW6TG
VendorNumonyx/ST Micro (VA)
CategoryIntegrated Circuits (ICs)
Memory TypeFLASH
Memory Size8M (1M x 8)
Speed75MHz
InterfaceSPI, 3-Wire Serial
Package / Case8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
PackagingDigi-Reel?
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryFLASH
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names M25P80 VMW6TG
M25P80VMW6TG
M25P80 VMW6TGDKR ND
M25P80VMW6TGDKRND
M25P80-VMW6TGDKR



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