M25PX64-VME6G

The M25PX64-VME6G is designed as one kind of 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory device that can be erased a 4-Kbyte subsector at a time, a 64-Kbyte sector at a time, or as a whole, and it also can be write protected by software using a mix of volatile and non-volatile protection features, depending on the application needs.

Features of the M25PX64-VME6G are:(1)SPI bus compatible serial interface; (2)75 MHz (maximum) clock frequency; (3)2.7 V to 3.6 V single supply voltage; (4)Dual input/output instructions resulting in an equivalent clock frequency of 150 MHz:  Dual output fast read instruction and Dual input fast program instruction; (5)Whole memory continuously read by sending once a fast read or a dual output fast read instruction and an address; (6)64 Mbit Flash memory: Uniform 4-Kbyte subsectors and Uniform 64-Kbyte sectors; (7)Additional 64-byte user-lockable, one-time programmable (OTP) area; (8)Deep power-down mode: 5 A (typical); (9)More than 100 000 write cycles per sector; (10)More than 20 years data retention.

The absolute maximum ratings of the M25PX64-VME6G can be summarized as:(1)Storage temperature: -65 to 150 °C;(2)Lead temperature during soldering: -;(3)Input and output voltage (with respect to ground): -0.6 to VCC+0.6 V;(4)Supply voltage: -0.6 to 4.0 V;(5)Fast program / erase voltage: -0.2 to 10.0 V;(6)Electrostatic discharge voltage (human body model): -2000 to 2000 V. If you want to know more information such as the electrical characteristics about the M25PX64-VME6G, please download the datasheet in www.seekic.com or www.chinaicmart.com.