Position: Home > Datasheet list > M28 Series > Index M > M28W640FCB
Electronica China

Purchase M28W640FCB, In-stock M28W640FCB From SeekIC.

 

M28W640FCB Product Image

M28 Series Datasheet download

Five Points

Part Number: M28W640FCB

 

 

 

 

Description: The M28W640FCT and M28W640FCB are 64 Mbit (4 Mbit x 16) non-volatile Flash memories that can be erased...


Urgent Purchase

M28W640FCB General Description


The M28W640FCT and M28W640FCB are 64 Mbit (4 Mbit x 16) non-volatile Flash memories that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

The devices feature an asymmetrical blocked architecture. They have an array of 135 blocks: 8 Parameter Blocks of 4 KWord and 127 Main Blocks of 32 KWord. The M28W640FCT has the Parameter Blocks at the top of the memory address space while the M28W640FCB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 5., Block Addresses.

The M28W640FCT and M28W640FCB feature an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is an additional hardware protection against program and erase. When VPP VPPLK all blocks are protected against program or erase. All blocks are locked at Power Up.

Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles. The device includes a 192 bit Protection Register to increase the protection of a system design. The Protection Register is divided into a 64 bit segment and a 128 bit segment. The 64 bit segment contains a unique device number written by ST, while the second one is one-time-programmable by the user. The user programmable segment can be permanently protected. Figure 6., shows the Protection Register Memory Map.

Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The memory is offered in TSOP48 (12 X 20mm) and TFBGA48 (6.39 x 10.5mm, 0.75mm pitch) packages and is supplied with all the bits erased (set to '1').

In addition to the standard version, the packages are also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive. All packages are compliant with Lead-free soldering processes.

M28W640FCB Maximum Ratings

Symbol Parameter Value Unit
Min Max
TA Ambient Operating Temperature (1) -40 85 °C
TBIAS Temperature Under Bias -40 125 °C
TSTG Storage Temperature -55 155 °C
TLEAD Lead Temperature during Soldering   (2) °C
VIO Input or Output Voltage -0.6 VDDQ+0.6 V
VDD, VDDQ Supply Voltage -0.6 4.1 V
VPP Program Voltage -0.6 13 V

1. Depends on range.
2. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.

M28W640FCB Features

SUPPLY VOLTAGE
   VDD = 2.7V to 3.6V Core Power Supply
   VDDQ= 1.65V to 3.6V for Input/Output
   VPP = 12V for fast Program (optional)
ACCESS TIME: 70, 85, 90,100ns
PROGRAMMING TIME:
   10s typical
   Double Word Programming Option
   Quadruple Word Programming Option
COMMON FLASH INTERFACE
MEMORY BLOCKS
   Parameter Blocks (Top or Bottom location)
   Main Blocks
BLOCK LOCKING
   All blocks locked at Power Up
   Any combination of blocks can be locked
   WP for Block Lock-Down
SECURITY
   128 bit user Programmable OTP cells
   64 bit unique device identifier
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
   Manufacturer Code: 20h
   Top Device Code, M28W640FCT: 8848h
   Bottom Device Code, M28W640FCB: 8849h
PACKAGES
   Compliant with Lead-Free Soldering Processes
   Lead-Free Versions

M28W640FCB Connection Diagram

M28W640FCB  Connection Diagram

M28W640FCB datasheet

M28W640FCB
PDF/DataSheet Download

  • Datasheet: M28W640FCB
  • File Size: 960040 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

Find M28W640FCB Suppliers

  • ·M28.173A
  • INTERSIL [Intersil Corporation] 
  • Plastic Packages for Integrated Circuits 
  • 13494 KB
  • M28.173A Datasheet Download
  • ·M28010
  • STMICROELECTRONICS [STMicroelectronics] 
  • 1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection 
  • 153894 KB
  • M28010 Datasheet Download
  • ·M28010-10BA1T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection 
  • 153894 KB
  • M28010-10BA1T Datasheet Download
  • ·M28010-10BA6T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection 
  • 153894 KB
  • M28010-10BA6T Datasheet Download
  • ·M28010-10KA1T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection 
  • 153894 KB
  • M28010-10KA1T Datasheet Download
  • ·M28010-10KA6T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection 
  • 153894 KB
  • M28010-10KA6T Datasheet Download
  • ·M28010-10NA1T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection 
  • 153894 KB
  • M28010-10NA1T Datasheet Download
  • ·M28010-10NA6T
  • STMICROELECTRONICS [STMicroelectronics] 
  • 1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection 
  • 153894 KB
  • M28010-10NA6T Datasheet Download

M28W640FCB Relative Products

  • M28W640ECT85N6

    M28W640ECT85N6

    Features of the M28W640ECT85N6 are:(1)supply voltage;(2)access time is 70,85,90,100ns;(3)programming time 10s/byte;(4)common flash interface;(5)memory blocks;(6)block locking;(7)secuity;(8)automatic stan-by mode;(9)program and erase suspend;(11)100,000 progr...

  • M28W640ECT

    M28W640ECT

    The M28W640ECT is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input...

  • M28W640ECB

    M28W640ECB

    The M28W640ECB is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input...

  • M28W640CT

    M28W640CT

    The M28W640CT is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ al...

  • M28W640CB

    M28W640CB

    The M28W640CB is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ al...

  • M28W640

    M28W640

    The M28W640 is a 64 Mbit (4 Mbit*16) non-volatile flash memory that can be erased electrically at the block level and programmed in-system on a word-by-word basis. Features of the M28W640 are:(1)supply voltage;(2)access time is 3.0V to 3.6V:80ns,2.7V to 3.6...

Hotspot Suppliers Product

  • Models: JQC-3F(T73)
Price: 0.28-0.5 USD

    JQC-3F(T73)

    Price: 0.28-0.5 USD

    Small-scaly power, electromagnetic relay, high sensitivity, low power dissipation, 1200W

  • Models: TMS320F2812PGFA
Price: 1-1 USD

    TMS320F2812PGFA

    Price: 1-1 USD

    digital signal processor, 128-Bit Security Key, QFP, 12-Bit ADC, 16 Channels

  • Models: AQV201A
Price: 0.5-0.8 USD

    AQV201A

    Price: 0.5-0.8 USD

    High Function, 1-Channel Type, 1,500 V, 1 A, 100 Hz, Low-level, off state leakage current

  • Models: M29W800DT70N6E
Price: 0.72-0.75 USD

    M29W800DT70N6E

    Price: 0.72-0.75 USD

    8-Mbit non-volatile memory, TSOP-48, -0.6 to 4V, Low power consumption

  • Models: MCP8250AVRIHBB
Price: 23.5-28 USD

    MCP8250AVRIHBB

    Price: 23.5-28 USD

    MCP8250AVRIHBB, BGA, Motorola

  • Models: LFCN-1000+
Price: 1.1-1.6 USD

    LFCN-1000+

    Price: 1.1-1.6 USD

    Low Pass Filter, SMD, 10W power handling, small size, patent pending, 7 sections

  • Models: OPA2652U/2K5
Price: 1.51-1.58 USD

    OPA2652U/2K5

    Price: 1.51-1.58 USD

    wideband voltage-feedback amplifier, 8SOIC, 200MHz, 11mA, 6 V ~ 12 V, RoHS Compliant

  • Models: BSM100GB60DLC
Price: 36-55 USD

    BSM100GB60DLC

    Price: 36-55 USD

    IGBT, Module, IC 100A, VGE 15V, IGES 400 nA, eupec GmbH, BSM100GB60DLC

  • Models: L298N
Price: 1-1 USD

    L298N

    Price: 1-1 USD

    integrated monolithic circuit, 15-lead Multiwatt, PowerSO20, 46 v

  • Models: ADS7843E
Price: 1.97-3.33 USD

    ADS7843E

    Price: 1.97-3.33 USD

    12-bit, analog-to-digital converter, 16-QSOP, –0.3V to +6V, 250mW, 125kHz

  • Models: LT6100CMS8-PBF
Price: 0.01-0.02 USD

    LT6100CMS8-PBF

    Price: 0.01-0.02 USD

    current sense amplifier, SOP, 300μV

  • Models: 74HC273N
Price: 0.1-1.5 USD

    74HC273N

    Price: 0.1-1.5 USD

    positive-edge trigger, DIP, 66MHz

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All