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M29F016B

Features: SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONSACCESS TIME: 55nsPROGRAMMING TIME 8ms by Byte typical32 UNIFORM 64 Kbyte MEMORY BLOCKSPROGRAM/ERASE CONTROLLER Embedded Byte Program algorithm Embedded Multi-Block/Chip Erase algorithm Status Register Polling and Togg...

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SeekIC No. : 004404362 Detail

M29F016B: Features: SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONSACCESS TIME: 55nsPROGRAMMING TIME 8ms by Byte typical32 UNIFORM 64 Kbyte MEMORY BLOCKSPROGRAM/ERASE CONTROLLER Embedded...

M29F016B Data Sheet

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Part Number:
M29F016B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

SINGLE 5V±10% SUPPLY VOLTAGE for
   PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
   8ms by Byte typical
32 UNIFORM 64 Kbyte MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
   Embedded Byte Program algorithm
   Embedded Multi-Block/Chip Erase algorithm
   Status Register Polling and Toggle Bits
    Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
    Read and Program another Block during
Erase Suspend
TEMPORARY BLOCK UNPROTECTION
   MODE
UNLOCK BYPASS PROGRAM COMMAND
   Faster Production/Batch Programming
LOW POWER CONSUMPTION
   Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
   BLOCK
20 YEARS DATA RETENTION
   Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
   Manufacturer Code: 20h
   Device Code: ADh


Pinout

Connection Diagram Connection Diagram


Specifications

Symbol Parameter Value Unit
TA Ambient Operating Temperature (Temperature Range Option 1) 0 to 70
Ambient Operating Temperature (Temperature Range Option 6) 40 to 85
Ambient Operating Temperature (Temperature Range Option 3) 40 to 125
TBIAS Temperature Under Bias 50 to 125
TSTG Storage Temperature 65 to 150
VIO(2) Input or Output Voltage 0.6 to 6 V
VCC Supply Voltage 0.6 to 6 V
VID Identification Voltage 0.6 to 13.5 V



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