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Part Number: M29F100B

 

 

 

 

Description: The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin system...


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M29F100B General Description


The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin systemona Byte-by-ByteorWord-by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The arraymatrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.

M29F100B Maximum Ratings

Symbol Parameter Value Unit
TA Ambient Operating Temperature (3) 40 to 125 °C
TBIAS Temperature Under Bias 50 to 125 °C
TSTG Storage Temperature 65 to 150 °C
VIO (2) Input or Output Voltage 0.6 to 4 V
VCC Supply Voltage 0.6 to 4 V
V(A9, E, G,RP)(2) Identification Voltage 0.6 to 13.5 V

M29F100B Connection Diagram

M29F100B Connection Diagram

M29F100B datasheet

M29F100B
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  • Datasheet: M29F100B
  • File Size: 159095 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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