M29F102BB45N1

The M29F102BB45N1 is one member of the M29F102BB family which is 1 Mbit Single Supply Flash Memory. The M29F102BB is a 1 Mbit (64Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Features of the M29F102BB are:(1) Single 5v±10% supply voltage for program, erase and read operations; (2)Access time: 35ns; (3)Programming time 8ms per Word typical; (4) 5 memory blocks 1 Boot Block (Bottom Location) 2 Parameter and 2 Main Blocks; (5)Program/erase controller Embedded Word Program algorithm, Embedded Multi-Block/Chip Erase algorithm Status Register Polling and Toggle Bits Erase suspend and resume modes; (6) Read and Program another Block during Erase Suspend; (7) Unlock bypass program command Faster Production/Batch Programming; (8)Temporary block unprotection mode; (8) Low power consumption Standby and Automatic Standby; (9)100,000 program/erase cycles per block; (10)M28F102 compatible Pin-out and Read Mode.

The absolute maximum ratings of the M29F102BB can be summarized as:(1)supply voltage:-0.6 to 6V;(2)Identification Voltage:0.6 to 13.5V;(3)Input or output Voltage: 0.6 to 6 V;(4)Differential Input Voltage :±25V;(5)storage temperature:-65°C to +150°C;(6)Temperature Under Bias:50 to 125°C; (7)Ambient Operating Temperature: 0 to 70°C. If you want to know more information such as the electrical characteristics about the M29F102BB, please download the datasheet in www.seekic.com or www.chinaicmart.com.