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Part Number: M29F160BT

 

 

 

 

Description: The M29F160B is a 16Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These op...


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M29F160BT General Description


The M29F160B is a 16Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

The blocks in the memory are asymmetrically arranged, see Tables 3 and 4, Block Addresses. The first or last 64 Kbytes have been divided into four additional blocks. The 16 Kbyte Boot Block can be used for small initialization code to start the microprocessor, the two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining 32K is a small Main Block where the application may be stored.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. The memory is offered in a TSOP48 (12 x 20mm) package and it is supplied with all the bits erased (set to '1').

M29F160BT Maximum Ratings

Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°C
Ambient Operating Temperature (Temperature Range Option 6)
40 to 85
°C
Ambient Operating Temperature (Temperature Range Option 3)
40 to 125
°C
TBIAS
Temperature Under Bias
50 to 125
°C
TSTG
Storage Temperature
65 to 150
°C
VIO(2)
Input or Output Voltage
0.6 to 6
V
VCC
Supply Voltage
0.6 to 6
V
VID
Identification Voltage
0.6 to 13.5
V

M29F160BT Features

SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
8s per Byte/Word typical
35 MEMORY BLOCKS
1 Boot Block (Top or Bottom Location)
2 Parameter and 32 Main Blocks
PROGRAM/ERASE CONTROLLER
Embedded Byte/Word Program algorithm
Embedded Multi-Block/Chip Erase algorithm
Status Register Polling and Toggle Bits
Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION MODE
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code M29F160BT: 22CCh
Bottom Device Code M29F160BB: 224Bh

M29F160BT Connection Diagram

M29F160BT  Connection Diagram

M29F160BT datasheet

M29F160BT
PDF/DataSheet Download

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