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MFG:11000  Package Cooled:ST  

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Part Number: M29F200BT

 

MFG: 11000

Package Cooled: ST

 

Description: The M29F200B is a 2 Mbit (256Kb x8 or 128Kbx16) non-volatile memory that can be read, erased and reprogrammed. These op...


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M29F200BT General Description


The M29F200B is a 2 Mbit (256Kb x8 or 128Kbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per-formed using a single 5V supply. On power-up the memory defaults to its Read mode where it can beread in the same way as a ROM or EPROM. The M29F200B is fully backward compatible with the M29F200.

The memory is divided into blocks that can beerased independently so it is possible to preservevalid data while old data is erased. Each block canbe protected independently to prevent accidental Program or Erase commands from modifying thememory. Program and Erase commands are writ-ten to the Command Interface of the memory. Anon-chip Program/Erase Controller simplifies the process of programming or erasing the memory bytaking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

M29F200BT Maximum Ratings

Symbol Parameter
Value
Unit
TA
 Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°C
Ambient Operating Temperature (Temperature Range Option 6)
40 to 85
°C
Ambient Operating Temperature (Temperature Range Option 3)
40 to 125
°C
TBIAS
 Temperature Under Bias
50 to 125
°C
TSTG
 Storage Temperature
65 to 150
°C
VIO (2)
 Input or Output Voltage
0.6 to 6
V
VCC
 Supply Voltage
0.6 to 6
V
VID
 Identification Voltage
0.6 to 13.5
V

M29F200BT Features

SINGLE 5V±10% SUPPLY VOLTAGE for
   PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45ns
PROGRAMMING TIME
  8µs per Byte/Word typical
7 MEMORY BLOCKS
   1 Boot Block (Top or Bottom Location)
   2 Parameter and 4 Main Blocks
PROGRAM/ERASE CONTROLLER
   Embedded Byte/Word Program algorithm
   Embedded Multi-Block/Chip Erase algorithm
   Status Register Polling and Toggle Bits
   Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
   Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
   Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION MODE
LOW POWER CONSUMPTION
   Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
   Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
   Manufacturer Code: 0020h
    M29F200BT Device Code: 00D3h
   M29F200BB Device Code: 00D4h

M29F200BT Connection Diagram

M29F200BT Connection Diagram

M29F200BT datasheet

M29F200BT
PDF/DataSheet Download

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