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Part Number: M29F400B
Description: The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and pr...
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M29F400B
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DataSheet
General Description
M29F400B General Description
The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-ByteorWordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application.
M29F400B Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| TA | Ambient Operating Temperature (3) |
40 to 125 |
|
| TBIAS | Temperature Under Bias |
50 to 125 |
|
| TSTG | Storage Temperature |
-65 to +150 |
|
| VIO(2) | Input or Output Voltages |
0.6 to 7 |
V |
| VCC | Supply Voltage |
0.6 to 7 |
V |
| V(A9, E, G, RP) (2) | A9, E, G, RP Voltage |
0.6 to 13.5 |
V |
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "AbsoluteMaximum Ratings" may cause permanent dam ge to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not i mplied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.
3. Depends on range.
M29F400B Features
`5V±10% SUPPLYVOLTAGEfor PROGRAM, ERASE and READ OPERATIONS
`FASTACCESS TIME: 55ns
`FASTPROGRAMMING TIME
10s by Byte / 16s by Word typical
`PROGRAM/ERASE CONTROLLER (P/E.C.)
Program Byte-by-Byte or Word-by-Word
Status Register bits and Ready/Busy Output
`MEMORY BLOCKS
Boot Block (Top or Bottom location)
Parameter and Main blocks
`BLOCK, MULTI-BLOCK and CHIP ERASE
`MULTI-BLOCKPROTECTION/TEMPORARY UNPROTECTION MODES
`ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
`LOW POWER CONSUMPTION
Stand-byand Automatic Stand-by
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`20 YEARSDATARETENTION
Defectivity below 1ppm/year
`ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Device Code, M29F400T: 00D5h
Device Code, M29F400B: 00D6h
`FASTACCESS TIME: 55ns
`FASTPROGRAMMING TIME
10s by Byte / 16s by Word typical
`PROGRAM/ERASE CONTROLLER (P/E.C.)
Program Byte-by-Byte or Word-by-Word
Status Register bits and Ready/Busy Output
`MEMORY BLOCKS
Boot Block (Top or Bottom location)
Parameter and Main blocks
`BLOCK, MULTI-BLOCK and CHIP ERASE
`MULTI-BLOCKPROTECTION/TEMPORARY UNPROTECTION MODES
`ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
`LOW POWER CONSUMPTION
Stand-byand Automatic Stand-by
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`20 YEARSDATARETENTION
Defectivity below 1ppm/year
`ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Device Code, M29F400T: 00D5h
Device Code, M29F400B: 00D6h
M29F400B Connection Diagram
M29F400B
PDF/DataSheet Download
- Datasheet: M29F400B
- File Size: 237293 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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